Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

195A Tc

Drive Voltage (Max Rds On, Min Rds On)  

6V 10V

Number of Elements  

1

Power Dissipation (Max)  

230W Tc

Turn Off Delay Time  

78 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

HEXFET®, StrongIRFET™

Published  

2007

Part Status  

Discontinued

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Terminal Form  

GULL WING

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

230W

Case Connection  

DRAIN

Turn On Delay Time  

19 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.8m Ω @ 100A, 10V

Vgs(th) (Max) @ Id  

3.9V @ 150μA

Input Capacitance (Ciss) (Max) @ Vds  

7330pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

225nC @ 10V

Rise Time  

70ns

Drain to Source Voltage (Vdss)  

40V

Vgs (Max)  

±20V

Fall Time (Typ)  

53 ns

Continuous Drain Current (ID)  

195A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

20V

DS Breakdown Voltage-Min  

40V

Avalanche Energy Rating (Eas)  

802 mJ

Recovery Time  

30 ns

Nominal Vgs  

3 V

Height  

4.83mm

Length  

10.67mm

Width  

9.65mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free